TiO₂ as a Resistive Switching Memory Device: Applications, Mechanisms, and Future Prospects
In the ever-evolving world of data storage, Resistive Switching Memory (ReRAM) has emerged as a promising alternative to traditional memory devices such as NAND Flash and DRAM. Among the various materials used in the development of ReRAM, Titanium Dioxide (TiO₂) has gained significant attention due to its excellent resistive switching properties, scalability, and potential for […]
