Understanding ReRAM IV Characteristics: A Deep Dive into LRS and HRS States
Resistive Random-Access Memory (ReRAM) has emerged as a promising candidate for next-generation memory devices due to its high-speed operation, low power consumption, and potential for integration with existing semiconductor technologies. ReRAM is a type of non-volatile memory that relies on the resistance switching properties of a dielectric material (usually a metal oxide) to store data. […]
